The electronic properties and growth mode of Sn/InSb(111) interfaces have been investigated by angular resolved photoemission spectroscopy (ARUPS), high energy electron diffraction (RHEED), and work function measurements. For Sn coverages of ∼1 ML the Fermi level is pinned at the bottom of the conduction band. The interfacial growth is heteroepitaxial and extends to a thickness of ∼5 ML of Sn. This is followed by the formation of diamond structured α-Sn up to ∼40 ML. Beyond this thickness three dimensional island growth starts and the films are a mixture of semiconducting α-Sn and metallic β-Sn. Above ∼120 ML Sn, the surface region consists of pure β-Sn while due to a strong substrate stabilization effect the interface region still consists of the α-Sn phase.

Results on the fabrication and characterisation of thin films of the novel host, titania ( TiO 2), for the Tb 3+ activator ion are reported. The titania films were produced by the sol-gel process at room temperature using the dip coating method and deposited on silicon and corning glass substrates. It is shown that a different surface morphology is developed for the TiO 2:Tb films deposited on different substrates. When enough amount of Tb is incorporated and, a He-Cd 325 nm photoexcitation is used as excitation line, the films show green photoluminescence (PL) signal associated with the 5 D 4→7 F j transition of the electronic structure of Tb 3+ plus an broad band due to matrix's defects. The PL emission has better characteristics for the films deposited on silicon wafers.

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.