By the end of 2018, 42 years after the landing of the two Viking seismometers on Mars, InSight will deploy onto Mars’ surface the SEIS ( S eismic E xperiment for I nternal S tructure) instrument; a six-axes seismometer equipped with both a long-period three-axes Very Broad Band (VBB) instrument and a three-axes short-period (SP) instrument. These six sensors will cover a broad range of the seismic bandwidth, from 0.01 Hz to 50 Hz, with possible extension to longer periods. Data will be transmitted in the form of three continuous VBB components at 2 sample per second (sps), an estimation of the short period energy content from the SP at 1 sps and a continuous compound VBB/SP vertical axis at 10 sps. The continuous streams will be augmented by requested event data with sample rates from 20 to 100 sps. SEIS will improve upon the existing resolution of Viking’s Mars seismic monitoring by a factor of at 1 Hz and at 0.1 Hz. An additional major improvement is that, contrary to Viking, the seismometers will be deployed via a robotic arm directly onto Mars’ surface and will be protected against temperature and wind by highly efficient thermal and wind shielding. Based on existing knowledge of Mars, it is reasonable to infer a moment magnitude detection threshold of at epicentral distance and a potential to detect several tens of quakes and about five impacts per year. In this paper, we first describe the science goals of the experiment and the rationale used to define its requirements. We then provide a detailed description of the hardware, from the sensors to the deployment system and associated performance, including transfer functions of the seismic sensors and temperature sensors. We conclude by describing the experiment ground segment, including data processing services, outreach and education networks and provide a description of the format to be used for future data distribution. Electronic Supplementary Material The online version of this article (10.1007/s11214-018-0574-6) contains supplementary material, which is available to authorized users.

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In this work, we addressed the local degradation mechanisms limiting the prelaunch environmental durability of thin-layered silver stacks for demanding space mirror applications. Local initiation and propagation of tarnishing were studied by combined surface and interface analysis on model stack samples consisting of thin silver layers supported on lightweight SiC substrates and protected by thin SiO overcoats, deposited by cathodic magnetron sputtering and submitted to accelerated aging in gaseous HS. The results show that tarnishing is locally initiated by the formation of AgS columns erupting above the stack surface. AgS growth is promoted at high aspect ratio defects (surface pores) of the SiC substrate as a result of an imperfect protection by the SiO overcoat. Channels most likely connect the silver layer to its environment through the protection layer, which enables local HS entry and AgS growth. The silver sulfide columns grow in number and size eventually leading to coalescence with increasing HS exposure. In more advanced stages, tarnishing slows down owing to saturation of all pre-existing imperfectly protected sites of preferential sulfidation. However, it progresses radially at the basis of the AgS columns underneath the protection layer, consuming the metallic silver layer and deteriorating the protecting overcoat.

In this paper, homogeneous and dense silicon-based coatings have been deposited from hexamethyldisiloxane (HMDSO: Si 2 O(CH 3 ) 6 ) on patterned silicium in a Townsend dielectric barrier discharge operating at atmospheric pressure. A brief description of the physical mechanisms ruling the step coverage is first described, followed by a description of the atmospheric pressure plasma process used. The step coverage is discussed with regard to the aspect ratio of the patterned wafers. Coatings deposited in and after the discharge region have also been characterized to understand the influence of plasma activation. In order to understand the experimental results, numerical simulations have been performed using a simplified reactive transport model. These results provide information and first general insight on the physical mechanisms ruling the conformity of silicon-based films deposited with this technique.Index Terms-Atmospheric pressure Townsend discharge (APTD), dielectric barrier discharge (DBD), glow discharges, plasma-enhanced chemical vapor deposition (PECVD), reactive transport modeling, silicon oxide, step coverage.