A solid immersion lens attached to a conventional objective increases the effective numerical aperture (NA(eff)) of an optical pickup and yields an areal recording density proportional to (NA(eff))(2). One version of this device, with an effective (NA(eff)) of 1.7, should be capable of very high density storage but would probably need a sealed system. Another simple configuration enables the use of this method for optical data storage in an unsealed environment and extends the spatial cutoff frequency 1.5 times. Experiments with these devices are compared with the full vector field theory of this type of imaging system.
Coherent interlayer cross talk and stray-light intensity of multilayer read-only-memory (ROM) optical disks are investigated. From results of scalar diffraction analyses, we conclude that layer separations above 10 microm are preferred in a system using a 0.85 numerical aperture objective lens in terms of signal quality and stability in focusing control. Disk structures are optimized to prevent signal deterioration resulting from multiple reflections, and appropriate detectors are determined to maintain acceptable stray-light intensity. In the experiment, quadrilayer and octalayer high-density ROM disks are prepared by stacking UV-curable films onto polycarbonate substrates. Data-to-clock jitters of < or = 7% demonstrate the feasibility of multilayer disk storage up to 200 Gbytes.
Organic thin transistors (OTFTs) on indium tin oxide glass substrates are prepared with polymethyl-methacrylateco-glyciclyl-methacrylate (PMMA-GMA) as the gate insulator layer and copper phthalocyanine as the organic semiconductor layer. By controlling the thickness, the average roughness of surface is reduced and the OTFT performance is improved with leak current decreasing to 10 −11 A and on/off ratio of 10 4 . Under the condition of drain-source voltage −20 V, a threshold voltage of −3.5 V is obtained. The experimental results show that PMMA-GMA is a promising insulator material with a dielectric constant in a range of 3.9-5.0.
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