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In this paper NiONPs/n-PSi/Si heterojunction for gas sensor has been investigated using chemical method and can show to enhance sensitivity. The structural properties SEM and XRD were synthesis. The sensitivity of NiO/PSi/Si heterojunction for gas sensor to H2, N2 and CO gas was studied. It is obtained a high gas response is clear at 250 C at low concentration 50 ppm. The NiO NPs depended on the temperature and gas concentration.

Thick films of poly(vinyl chloride)(PVC)& PVC doped with Zn(etx)2 salt complex have been prepared by cast method with fixed thickness almost (120±5) Microns. Optical studies were carried out in the wavelengths region(200-900)nm based on absorption & transmition measurement. Optical parameters such as absorption coefficient(?) ,refraction index(n) and extinction coefficient(K) were observed to be effected by adding the dopant.Electrical parameters such as real(?)& imaginary(?) part of dielectric constant were also calculated part of dielectric constant were also calculated from the optical parameters using Maxwell equation.