No abstract

The paper describes an application of the Peaks Over Threshold (POT) method to significant wave height data of Figueira da Foz, Portugal. The method is briefly explained and justified. The exponential distribution is shown to be adequate for modeling the peaks of clustered excesses over a threshold of 6 m. Estimates of return values are given. The exponential character of the data is theoretically justified in the Appendix.

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Hydrogenated microcrystalline silicon (c-Si:H) thin films with Cu as a dopant material (about 2 wt.%) were deposited by RF planar magnetron sputtering in an argon/hydrogen plasma. The composition and microstructure of the films were analysed by SEM, ERD/RBS, X-ray diffraction and Raman spectroscopy. These techniques revealed a columnar film structure, each column consisting of several small (nano) crystals with a lateral dimension up to 10nm. The crystals are oriented, generally with the (111) plane parallel to the sample surface. The hydrogen content of the thin films is about 27-33 at.%. Low deposition rates and low sputter gas pressures favour crystallisation and grain growth. The behaviour can be understood in terms of the diffusion or relaxation length  of the deposited Si-atoms.