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This work is devoted to the study of boron doping diffusion process for n-type silicon solar cells applications. Deposition temperature is an important parameter in the diffusion process. In this paper we investigate its influence using an industrial scale furnace [1] (LYDOPTM Boron), which is developed by Semco Engineering. We especially used a numerical model (Sentaurus) in order to further understand the boron diffusion mechanism mainly with respect of the diffusion temperature. The model calibration is based on boron concentration profiles obtained by SIMS (Secondary Ion Mass Spectrometry) analysis. We observed that the boron profiles could be correctly simulated by a single fitting parameter. This parameter, noted kBoron which is connected to the chemical reaction kinetics developed at the interface between the boron silicon glass (BSG) and the silicon substrate

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Articles you may be interested inAnalytical low-frequency noise model in the linear region of lightly doped nanoscale doublegate metal-oxide-semiconductor field-effect transistors Abstract. We present a numerical low frequency noise modeling related to oxide trapping/detrapping process, based on green's function formulation and its application to ultrathin oxide characterization. This model allows slow trap density profiles to be determined. The model was applied in the investigation of the validity of the flat band voltage fluctuation model in the case of thin oxides. Numerical gate current noise modeling was applied to the characterization of nitridation-induced traps. Finally, 2D model was applied in the investigation of low-frequency degradation of MOSFETs stressed by hot-carriers, and the generated slow oxide trap density profiles were deduced.

On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs AIP Conf.Abstract. In this paper, we present a new numerical model of the flat band voltage power spectral density (S V FB) in ultra-thin gate oxides. Unlike previous classical models, we don't use the equivalent concept which relates the fluctuation of the oxide charge to the flat-band voltage fluctuation. Localized noise sources in the oxide are implanted into the model and by using a Green's function approach, the spectral cross-correlation of the electrical potential is evaluated at each node in the device mesh in order to obtain a highly accurate physical description. In the paper, we evaluate the validity of the classical model. In view of this, we have compared simulation results to those of the classical formulation, in the case of thin oxides.