Abstract. Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 °C and T diode = 27 °C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ~0.85 W/cm 2 could be attained under the above operating temperatures.

Energy conversion efficiencies of better than 23% have been demonstrated for small scale tests ofa few thermophotovoltaic-(TPV) cells using front surface, tandem filters [1,2]. The engineering challenge is to build this level of efficiency into arrays of cells that provide useful levels of energy. Variations in cell and filter performance will degrade TPV array performance. Repeated fabrication runs of several filters each provide an initial quantification of the fabrication variation for front surface, tandem filters for TPV spectral control. For three performance statistics, within-run variation was measured to be 0.7-1.4 percent, and run-to-run variation was measured to be 0.5-3.2 percent. Fabrication runs using a mask have been shown to reduce variation across interference filters from as high 8-10 percent to less than 1.5 percent. Finally, several system design and assembly approaches are described to further reduce variation.