Switching devices based on wide band gap materials as SiC offer a significant performance improvement on the switch level (specific on-resistance, etc.) compared to Si devices. A well known example are SiC diodes employed for example in inverter drives with high switching frequencies. In this paper, the impact on the system level performance, i.e. efficiency, power density, etc., of industrial inverter drives and of DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.

In modern power electronic systems voltages across inductors or transformers generally show rectangular shapes, including periods of zero voltage. In the stage of zero applied voltage (constant flux) core losses are not necessarily zero. At the beginning of a period of constant flux losses still occur in the material. This is due to relaxation processes. A physical explanation about magnetic relaxation is given and a new core loss modeling approach that takes such relaxation effects into consideration is introduced. The new loss model is called i 2 GSE and has been verified experimentally.

To have units work out properly, the Steinmetz equation should actually be written Pv = k f f ref α B Bref β . However, it is very common to use (1) and implicitly assume B ref = 1 T and f ref = 1 Hz (or another set of units).

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