Specially designed intermediate carrier blocking layers (ICBLs) in multi-active regions of III-nitride LEDs were shown to be effective in controlling the carrier injection distribution across the active regions. In principle, the majority of carriers, both holes and electrons, can be guided into targeted quantum wells and recombine to generate light of specific wavelengths at controlled current-densities. Accordingly we proposed and demonstrated a novel monolithic InGaN-based LED to achieve three primary colors of light from one device at selected current densities. This LED structure, which has three different sets of quantum wells separated with ICBLs for three primary red-green-blue (RGB) colors, was grown by metal-organic chemical vapor deposition (MOCVD). Results show that this LED can emit light ranging from 460 to 650 nm to cover the entire visible spectrum. The emission wavelength starts at 650 nm and then decreases to 460 nm or lower as the injection current increases. In addition to three primary colors, many other colors can be obtained by color mixing techniques. To the best of our knowledge, this is the first demonstration of monolithic full-color LED grown by a simple growth technique without using re-growth process.

We discovered that adding H2 to the carrier gas in GaN barrier growth improved the light emitting diode (LED) peak quantum efficiency and shifted the efficiency maxima toward lower currents (∼20 mA). This implies that the Shockley–Read–Hall nonradiative process can be suppressed via the introduction of combination carrier gas (H2/N2) during barrier growth. Further, 1–2 nm thick Al-In-Ga-N alloys were adopted as capping layers to circumvent H2 etching effect during growth interruption. It was then revealed that quantum efficiency was effectively enhanced for LEDs employed with these thin large bandgap capping layers, particularly at low injection levels. Numerical simulation suggested that the improved quantum efficiency can be ascribed to the increased electron capture rate in the active region as well as enhanced electron and hole wavefunction overlap, which correlated well with experimental results.