InGaN – GaN multiple-quantum-well light-emitting diodes were fabricated on (101¯0) m plane GaN films grown on (101¯0) m plane 4H–SiC substrates. The [0001] axis of the epitaxial film is parallel to the [0001] axis of the substrate. The surface is striated, with features running perpendicular to the c axis and a maximum surface height difference of 45nm. Electroluminescence shows strong polarization anisotropy, with 7× more light emitted with polarization perpendicular to the c axis compared to parallel to the c axis. An Ahrrenius fit of the polarization ratio indicates that there is a 49meV difference in the energy gap between the two polarization states. This suggests that a high polarization ratio can be maintained at the high temperatures (>150°C) and drive current densities required for high-power light-emitting diode applications.