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Articles you may be interested inA Monte Carlo study of hot electron injection and interface state generation model for silicon metaloxide semiconductor fieldeffect transistors Oxide and interface degradation resulting from substrate hothole injection in metaloxidesemiconductor fieldeffect transistors at 295 and 77 K Oxide thickness dependence of interface trap generation in a metaloxidesemiconductor structure during substrate hothole injection Hotcarrierinduced degradation of metaloxidesemiconductor fieldeffect transistors: Oxide charge versus interface traps J. Appl. Phys. 65, 354 (1989); 10.1063/1.342548 Effect of oxide field on hotcarrierinduced degradation of metaloxidesemiconductor fieldeffect transistors

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