Integrated photonic devices based on Si 3 N 4 waveguides allow for the exploitation of nonlinear frequency conversion, exhibit low propagation loss, and have led to advances in compact atomic clocks, ultrafast ranging, and spectroscopy. Yet, the lack of Pockels effect presents a major challenge to achieve high-speed modulation of Si 3 N 4. Here, microwave-frequency acousto-optic modulation is realized by exciting high-overtone bulk acoustic wave resonances (HBAR) in the photonic stack. Although HBAR is ubiquitously used in modern communication and superconducting circuits, this is the first time it has been incorporated on a photonic integrated chip. The tight vertical acoustic confinement releases the lateral design of freedom, and enables negligible cross-talk and preserving low optical loss. This hybrid HBAR nanophotonic platform can find immediate applications in topological photonics with synthetic dimensions, compact opto-electronic oscillators, and microwave-to-optical converters. As an application, a Si 3 N 4-based optical isolator is demonstrated by spatiotemporal modulation, with over 17 dB isolation achieved.

The microscale integration of mid-and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by the choice of material platform, which immediately determines the strength and types of optical nonlinearities available, the optical transparency window, modal confinement, and physical robustness. In this work, we demonstrate a new platform, suspended AlGaAs waveguides integrated on silicon, providing excellent performance in all of these metrics. We demonstrate low propagation losses within a span of nearly two octaves (1.26 to 4.6 µm) with exemplary performance of 0.45 dB/cm at λ = 2.4 µm. We exploit the high nonlinearity of this platform to demonstrate 1560 nm-pumped second-harmonic generation and octave-spanning supercontinuum reaching out to 2.3 µm with 3.4 pJ pump pulse energy. With mid-IR pumping, we generate supercontinuum spanning from 2.3 to 6.5 µm. Finally, we demonstrate the versatility of the platform with mid-infrared passive devices such as low-loss 10 µm-radius bends, compact power splitters with 96 ± 1% efficiency and edge couplers with 3.0 ± 0.1 dB loss. This platform has strong potential for multi-functional integrated photonic systems in the mid-IR. arXiv:1905.01380v1 [physics.app-ph] 3 May 2019 have suitable optical transparency [23], and strong optical nonlinearities are also required for the generation or broadening of frequency combs in the mid-IR [15]. While significant Kerr nonlinearity is present in silicon, germanium and chalcogenide materials, they lack intrinsic second-order optical nonlinearities for highly efficient frequency conversion [6,7,24,25] and electro-optic modulation [26].Alternatively, group III-V materials possess many desirable properties for multi-functional integrated photonic systems including a high refractive index, strong second-and third-order optical nonlinearities, and wide optical transparency windows into the LWIR. A practical advantage of these materials is the ability to grow a chemically selective etch stop underneath a high-quality epitaxial device (donor) film, enabling wafer or chip-bonding film transfer techniques for heterogeneous integration [27,28]. This has enabled high-index-contrast III-V waveguides on other substrates such as oxidized silicon and sapphire [29][30][31][32][33]. However, to take full advantage of the broad transparency window supported by III-V semiconductors, it is necessary to pursue alternative geometries such as air-clad suspended waveguides. But even this approach requires a degree of caution, as most materials readily form surface oxide layers that also introduce absorption. Undercut etching has been used to suspend GaAs waveguides engineered for mid-IR difference frequency generation [34]. While this represents a promising step in the development of nonlinear mid-IR photonics with III-V materials, many issues remain, such as the propagation loss in the mid-IR region, atmospheric stabilit...

Spectral domain optical coherence tomography (OCT) is a widely employed, minimally invasive bio-medical imaging technique, which requires a broadband light source, typically implemented by super-luminescent diodes. Recent advances in soliton based photonic integrated frequency combs (soliton microcombs) have enabled the development of low-noise, broadband chipscale frequency comb sources, whose potential for OCT imaging has not yet been unexplored. Here, we explore the use of dissipative Kerr soliton microcombs in spectral domain OCT and show that, by using photonic chipscale Si3N4 resonators in conjunction with 1300 nm pump lasers, spectral bandwidths exceeding those of commercial OCT sources are possible. We characterized the exceptional noise properties of our source (in comparison to conventional OCT sources) and demonstrate that the soliton states in microresonators exhibit a residual intensity noise floor at high offset frequencies that is ca. 3 dB lower than a traditional OCT source at identical power, and can exhibit significantly lower noise performance for powers at the milli-Watt level. Moreover, we demonstrate that classical amplitude noise of all soliton comb teeth are correlated, i.e., common mode, in contrast to superluminescent diodes or incoherent microcomb states, which opens a new avenue to improve imaging speed and performance beyond the thermal noise limit.

We propose and implement a tunable, high power and narrow linewidth laser source based on a series of highly coherent tones from an electro-optic frequency comb and a set of 3 DFB slave lasers. We experimentally demonstrate approximately 1.25 THz (10 nm) of tuning within the C-Band centered at 192.9 THz (1555 nm). The output power is approximately 100 mW (20 dBm), with a side band suppression ratio greater than 55 dB and a linewidth below 400 Hz across the full range of tunability. This approach is scalable and may be extended to cover a significantly broader optical spectral range.