On-surface synthesized atomically precise graphene nanoribbons are promising candidates for use in future devices. This article reviews atomically precise graphene nanoribbons, in particular focusing on their electronic properties.

Following the recent demonstration of grazing‐incidence X‐ray fluorescence (GIXRF)‐based characterization of the 3D atomic distribution of different elements and dimensional parameters of periodic nanoscale structures, this work presents a new computational scheme for the simulation of the angular‐dependent fluorescence intensities from such periodic 2D and 3D nanoscale structures. The computational scheme is based on the dynamical diffraction theory in many‐beam approximation, which allows a semi‐analytical solution to the Sherman equation to be derived in a linear‐algebraic form. The computational scheme has been used to analyze recently published GIXRF data measured on 2D Si3N4 lamellar gratings, as well as on periodically structured 3D Cr nanopillars. Both the dimensional and structural parameters of these nanostructures have been reconstructed by fitting numerical simulations to the experimental GIXRF data. Obtained results show good agreement with nominal parameters used in the manufacturing of the structures, as well as with reconstructed parameters based on the previously published finite‐element‐method simulations, in the case of the Si3N4 grating.

A structural characterization of W/Si multilayers using X-ray reflectivity (XRR), scanning transmission electron microscopy (STEM) and grazing-incidence small-angle X-ray scattering (GISAXS) is presented. STEM images revealed lateral, periodic density fluctuations in the Si layers, which were further analysed using GISAXS. Characteristic parameters of the fluctuations such as average distance between neighbouring fluctuations, average size and lateral distribution of their position were obtained by fitting numerical simulations to the measured scattering images, and these parameters are in good agreement with the STEM observations. For the numerical simulations the density fluctuations were approximated as a set of spheroids distributed inside the Si layers as a 3D paracrystal (a lattice of spheroids with short-range ordering but lacking any long-range order). From GISAXS, the density of the material inside the density fluctuations is calculated to be 2.07 g cm−3 which is 89% of the bulk value of the deposited layer (2.33 g cm−3).

In this study, we report on the self-assembly of the organic electron donor 2,3,6,7,10,11-hexamethoxytriphenylene (HAT) on graphene grown epitaxially on Ir(111). Using scanning tunneling microscopy and low-energy electron diffraction, we find that a monolayer of HAT assembles in a commensurate close-packed hexagonal network on graphene/Ir(111). X-ray and ultraviolet photoelectron spectroscopy measurements indicate that no charge transfer between the HAT molecules and the graphene/Ir(111) substrate takes place, while the work function decreases slightly. This demonstrates that the HAT/graphene interface is weakly interacting. The fact that the molecules nonetheless form a commensurate network deviates from what is established for adsorption of organic molecules on metallic substrates where commensurate overlayers are mainly observed for strongly interacting systems.

No abstract