Articles you may be interested inEffect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector Appl. Phys. Lett. 99, 261102 (2011); 10.1063/1.3672030 Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors Appl. Phys. Lett. 98, 011108 (2011); 10.1063/1.3536480 GaN metal-semiconductor-metal ultraviolet photodetector with IrO 2 Schottky contact Appl. Phys. Lett. 81, 4655 (2002); 10.1063/1.1524035 Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy Growth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor

We present the growth and characterization of GaN p-i-n photodiodes with a very high degree of visible blindness. The thin films were grown by low-pressure metalorganic chemical vapor deposition. The room-temperature spectral response shows a high responsivity of 0.15 A/W up until 365 nm, above which the response decreases by six orders of magnitude. Current/voltage measurements supply us with a zero bias resistance of 1011 Ω. Lastly, the temporal response shows a rise and fall time of 2.5 μs measured at zero bias. This response time is limited by the measurement circuit.