High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

Walker, D.; Monroy, E.; Kung, Patrick; Wu, Jun; Hamilton, M.; Sánchez, F. J.; Diaz, J.; Razeghi, Manijeh

doi:10.1063/1.123303

Cited by 179 publications

(88 citation statements)

References 10 publications

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“…However, this should be compared to SiC which has a thermal conductivity of 360 K/mW at room temperature [31]. The high mobility and high break down field open great opportunities of fabricating highpower and high-frequency devices like photodectector, transitors and switches [8], [10], [11], [15]- [20].…”

Section: Basic Propertiesmentioning

confidence: 99%

“…This property makes it advantageous for optoelectronics devices working in short wavelength range [3]- [6] such as blue and ultraviolet (UV) light emitting diodes [5], laser diode [4], green light emitting devices [7] and UV photodetector [8]- [11]. In addition, GaN is also applied in the renewable energy field, particularly, making solar cells [12]- [14].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of deep levels in bulk GaN

Duc¹

2014

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The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. It has outstanding properties such as a direct wide bandgap (3.4 eV for GaN), high breakdown voltage and high electron mobility. With these properties, GaN is a promising material for a variety of applications in electronics and optoelectronics. The perhaps most important application is GaN-based light-emitting-diodes (LED) which can produce a highbrightness blue light. Since the bandgap of GaN can be controlled by alloying it with aluminium (Al) or indium (In) for a larger or smaller bandgap, respectively, GaN is very important for optoelectronic applications from infrared to the deep ultraviolet region. There are other semiconductors with bandgap similar to GaN such as SiC, and the first commercially blue light emitting LEDs where manufactured in SiC, however, SiC has an indirect bandgap with a low efficiency of emitting photons, and today, the SiC based LEDs have been completely replaced by the considerable more efficient GaN based LEDs. One problem, which has hampered the development of GaN based devices, is the lack of native substrate of GaN. Due to that, most of the GaN based devices are fabricated on foreign substrates such as SiC or Al2O3. Growing on a foreign substrate results in high threading dislocation (TD) densities (~109 cm-2) and stress in the GaN layer due to lattice mismatch and difference of thermal expansion coefficient between GaN and the substrate. The high TD density and the stress influence the performance of the devices. Another important aspect related to GaN which has attracted manystudies is how defects affect the efficiency of GaN-based devices.Therefore, it is necessary to understand the properties and to identifythem. When we know there properties, one can estimate how they willinfluence the behavior of devices, and thereby, optimize the performance of the device for its application. Basically, a fundamental knowledge of defect properties, and how to introduce them in a controlled manner, or to avoid them, is important in order to optimize the performance of devices. Defects can be introduced both intentionally and unintentionally into semiconductors during the growth process, during processing of the device or from the working environment, for example, devices working in a radioactive ambient are more likely to have defects induced by irradiation. This thesis is focused on electrical characterization of defects in bulk GaN grown by halide vapor phase epitaxy (HVPE) by using deep level transient spectroscopy. Other measurement techniques like currentvoltage measurement (IV), capacitance-voltage measurement (CV) a...

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Section: Basic Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of deep levels in bulk GaN

Duc¹

2014

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“…light-emitting diode and photodetector [28][29][30][31], covering a long range of wavelength. GaN is also a good candidate for fabricating high-power, high-frequency and high-temperature electronics, such as heterojunction bipolar transistors (HBT), heterostructure field effect transistors (BJT), high electron mobility transistors (HEMT), heterostructure field effect transistors (HFET), metal oxide semiconductor field effect transistors (MOSFET), Schottky and p-i-n rectifiers [32].…”

Section: Gallium Nitridementioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study. GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results. GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga...

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“…Also, since then, GaN systems have offered other promising applications [5][6][7]. In order to further expand their use on a wider scale, the material quality and efficiency of these devices need to be delivered at reduced costs.…”

Section: Introductionmentioning

confidence: 99%

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

Sarı¹,

Nizamoğlu²,

Choi³

et al. 2011

Opt. Express

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Abstract:We report on the electric field dependent carrier dynamics and optical absorption in nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which are surprisingly observed to be opposite to those polar ones of the same materials system and similar structure grown on c-plane. Confirmed by their time-resolved photoluminescence measurements and numerical analyses, we show that carrier lifetimes increase with increasing external electric field in nonpolar InGaN/GaN heterostructure epitaxy, whereas exactly the opposite occurs for the polar epitaxy. Moreover, we observe blue-shifting absorption spectra with increasing external electric field as a result of reversed quantum confined Stark effect in these polar structures, while we observe red-shifting absorption spectra with increasing external electric field because of standard quantum confined Stark effect in the nonpolar structures. We explain these opposite behaviors of external electric field dependence with the changing overlap of electron and hole wavefunctions in the context of Fermi"s golden rule. ©2011 Optical Society of America References and links1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, "High power InGaN single-quantum-well-structure blue and violet light-emitting diodes," Appl. Phys. Lett. 67(13), 1868-1870 (1995). 2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, "Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes," Appl. Phys. Lett. 69(26), 4056-4058 (1996).

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High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

Cited by 179 publications

References 10 publications

Investigation of deep levels in bulk GaN

Investigation of deep levels in bulk GaN

CVD solutions for new directions in SiC and GaN epitaxy

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

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