High-conductance Nb/A10. Y /Al/A10 x /Nb tunnel-junction devices with the Al thickness varying from 3 to 20 nm have been fabricated using a whole-wafer processing route. Current-voltage measurements show a step in the subgap structure corresponding to the difference in the energy gaps F=2(ANb -AM) of the two superconductors. The measured AAI is large and persists to temperatures considerably in excess of the equilibrium critical temperature of the Al. This is interpreted as arising from a tunnelinduced gap enhancement which is an order of magnitude larger than has been seen previously.
Ultrafast time-resolved optical absorption has been measured as a function of doping and temperature in Bi 2 Sr 2 Ca 1Ϫy Y y Cu 2 O 8 ͑0ϽyϽ1͒ and YBa 2 Cu 3 O 7Ϫ␦ ͑0.06 Ͻ␦ Ͻ1͒. A fast transient response is observed, which changes sign as a function of y in Bi 2 Sr 2 Ca 1Ϫy Y y Cu 2 O 8 and ␦ in YBa 2 Cu 3 O 7Ϫ␦ . Careful consideration of the possible mechanisms for the observed behavior leads us to suggest that two independent mechanisms are operating, whereby the two observed positive photoinduced absorption components are due to the electrodynamic response of photoinduced carriers, while the negative signal arises due to spectral hole burning. In the metallic samples a long-lived component is observed, which we suggest comes from photoinduced localized states intrinsic only to the superconducting species of the high-T c materials. A very significant increase in the scattering rate at temperatures just above T c signifies coupling to charge and possibly spin fluctuations just above T c . A large reduction in scattering rate is observed below T c , similar to that observed previously in
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