Nanosecond resolution time-resolved x-ray diffraction measurements have been used to study the temperature and temperature gradients in 〈100〉 and 〈111〉 oriented silicon crsytals during pulsed laser annealing. Thermal strain analysis of time-resolved extended Bragg scattering has shown the lattice temperature to reach the melting point during 15-ns, 1.5-J/cm2 ruby laser pulses and to remain at the melting point during the high reflectivity phase (HRP). The temperature gradients at the liquid-solid interface were found to be in the range of ∼107 K/cm during the HRP.

The OH~ and OD^ vibrational frequencies in stoichiometric and nonstoichiometric MgAl2O4 were measured. The nonstoichiometric material had a Al/Mg ratio of 7. The diffusion coefficient of deuterons in the nonstoichiometric material at 1600 K is about 6 + 3 X 10~8 cmVs. Deuterons can readily be swept out by applying an electric field at temperatures above 1000 K.

The strain distribution in boron implanted, laser annealed silicon has been investigated using x-ray Bragg reflection profiles. The 400 Bragg reflection profile from implanted, laser annealed silicon was analyzed, using the dynamical theory of scattering for distorted crystals, to obtain the strain distribution in the implanted layer as a function of depth. The depth distribution of the strain for an implantation dose of 1×1016 35 keV B+/cm2, followed by a 1.6 J/cm2 ruby laser pulse, was found to have a magnitude of −5.8×10−3 near the surface and was found to decrease rapidly for depths greater than 0.2 μm. The shape of the depth distribution of the strain was found to be essentially the same as that for the boron distribution after laser annealing.

X-ray diffuse scattering has been used to study the thermal annealing of vacancy and interstitial loops in Ni-ion irradiated copper. The diffuse scattering formalism is reviewed and diffuse scattering measurements are reported on liquid-He temperature Ni-ion irradiated copper after annealing to 40, 275, and 300 °C. Size distributions are presented for vacancy and interstitial loops after each anneal and the thermal-induced changes are discussed in terms of loop dissolution and coalescence.

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