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This study investigates the electrical properties of SONOS memories with embedded silicon nanocrystals (Si-NC) in nitride. The interface states at the SiO 2 /Si-substrate interface are identified by experiment and simulation. Embedded Si-NCs in nitride are confirmed as a formation of Si-quantum dots in nitride. The Si-NCs form quantum confined states above their conduction band (CB). The electron capture time of the Si-quantum dots states is increased during programming carriers. This mechanism reveals that the Si-quantum dots states are effortless to program, and that the electrons on these states after programming can be reserved more easily.

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