Carbon nitride films with the composition ratio CR(C/N)=0.5–3.0 were prepared by the ion and vapor deposition method, where carbon was evaporated on various substrates while being simultaneously bombarded with 0.5–10.0 keV nitrogen ions. The properties of the films were studied by x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectrometry (FT-IR), ultraviolet transmission spectroscopy, x-ray diffraction, and hardness measurements. The films formed at energies lower than 0.8 keV and CR(C/N)=0.6–0.7 on tungsten carbide showed the highest Knoop harness of 6400 kgf/mm2 on films with 1 μm thickness and a maximum optical band gap of 2.7 eV. X-ray diffraction measurements demonstrated that all films have an amorphous structure. The XPS and FT-IR studies indicated that the peak newly observed at 286.3 eV in the C-1s1/2 XPS spectra arises from triple bonding C≡N.

Thallium bromide (TlBr) is a semiconductor compound with a high atomic number and a wide bandgap, being a very promising material to be used as room temperature radiation detectors. In this work, commercial TlBr powder was used for growing crystals for detector applications. To reduce impurities, this material was purified by the zone refining technique. Trace impurities at ppb/ppm level were analyzed using inductively coupled plasma mass spectroscopy (ICP-MS). The efficiency of the purification was evaluated through studies of the decrease impurities concentrations in the TlBr powder and in the purified materials. The crystal quality was verified by X-ray diffraction (XRD). To evaluate the crystal as a semiconductor detector, systematic measurements of the transmittance, resistivity, and the radiation response ( 241 Am, 57 Co, 125 I, and 133 Ba) gamma rays were carried out.

Using a generalized scheme of multiple traps, thermoluminescence (TL) glow curves are calculated for different sets of systems parameters. In particular, the conditions under which glow peaks of first-order kinetics are produced are highlighted. The major findings and conclusions are as follows. (1) In the generalized scheme the glow peaks always reduce to first order at low trap occupancies. It is therefore suggested that the peak analysis to determine the parameters should be carried out only at low doses. (2) Glow peaks which follow first-order kinetics can be obtained irrespective of whether the recombination rate is faster, equal to or slower than the retrapping rate (Rret). (3) Quasi-equilibrium (QE) of free carriers in the delocalized band, which is the essential condition for the derivation of the conventional analytical expressions of TL and thermally stimulated conductivity, can be realized irrespective of whether RrecRret. (4) The realization of the QE condition depends on the concentrations of the traps and the recombination centres (RCs) and their cross sections for free carrier capture. It is discussed and shown that, in doped insulating and semiconducting materials, the values of these parameters are sufficiently high for the QE condition to be comfortably held. It is thus concluded that the doubts raised by earlier workers regarding the validity of the QE assumption in the derivation of the analytical expressions are unnecessary as far as these materials are concerned. (5) It is shown that a system in which some of the untrapped charge carriers recombine within the germinate centres and some become delocalized may satisfactorily explain the mechanism of TL emission in most of the phosphors. The properties of first-order, supralinearity and pre-dose sensitization may be easily explained under the framework of this system. (6) Conclusions (2) and (3) above disprove those of earlier workers who had concluded that QE and fast retrapping together do not form a consistent set of conditions and that the apparent dominance of first-order kinetics in nature is due to slow retrapping.

Thin zirconium oxide films, formed on Si(111) substrate by ion-beam assisted deposition, have been investigated by x-ray diffractometry with respect to the microstructure of the films, such as preferred orientation, interplanar spacing, crystallite size. The results of the interplanar spacing and diffraction intensity analysis could be interpreted in terms of relative amount of Zr4+ ions estimated by analyses of Zr 3d x-ray photoelectron spectroscopy spectra for the films.

Strong doubts havc been expressed about the validity of the quasi-equilibrium (QE) assumption used in the derivation of the analytical expressions of thermoluminescence (TL). So far there is no established method available to check if QE actually prevails during the emission of an experimental TL signal. The present study shows that the level of QE changes with a change in the heating rate beta. The change in the level of QE in its turn gets reflected in a change in peak shape when the system turns to a non-QE condition. This property is used as the first ever experimental method to test whether or not the emission of a given glow peak occurs under the QE condition. An essential condition for holding the QE condition is found to be T(R)/taum> or = 10(-3) where T(R) and taum are the glow peak recording duration and the maximum value of the free carrier lifetime, respectively. This relation between T(R) and taum is useful in finding the approximate value of taum. The value of taum being a function of the concentration and cross section of the TL related centres, one may be able to assess these basic parameters from the study of TL glow curves. The theoretical results are discussed in the perspective of LiF (TLD-100).