Crystalline carbon nitride films were deposited on Si and Si 3 N 4 /Si substrate by reactive RF magnetron sputtering system with chamber heating and DC bias. The deposited films showed α-C 3 N 4 , β-C 3 N 4 and lonsdaleite phase by XRD, XPS and FTIR. The crystalline morphology was found to gave a hexagonal structure, which has theoretical unit cell of carbon nitride observed in SEM photographs. When nitrogen gas ratio is 70%, RF power is 300 W and DC bias is -80 V, the growth rate of carbon nitride film on Si 3 N 4 substrate is 2.2 µm/hr, which is a relatively high growth rate compared with those in previously reported papers. The deposited films have thermally stable properties in the range of 650 • C to 1,400 • C.