InxGa1–xN quantum dots have been fabricated by the selective growth of GaN micro-pyramid arrays topped with InGaN/GaN quantum wells. The spatially- and spectrally-resolved luminescence properties of these structures were measured using low-temperature micro-photoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit linewidths down to 650 μeV (limited by the spectrometer resolution). We describe the broadening of the luminescence peak from a single dot as a function of temperature and excitation power

We have investigated exciton dynamics in asymmetric GaN quantum discs embedded in AlGaN barriers with an Al content of 50% using time-integrated and time-resolved micro-photoluminescence measurements. Emission from the quantum discs emerges at lower energy than that from the GaN nanocolumns, which suggests that GaN quantum discs are strongly affected by the built-in electric field. The lifetimes of localized excitons in quantum discs were obtained. Nonlinear emission from quantum discs under high excitation power was attributed to tunneling of carriers to larger discs from smaller discs.