In this work we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layer in organic photodetectors processed by solution. As PEDOT:PSS is known to be sensitive to humidity, oxygen and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer ofis used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons in the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9x10 13 cm(Hz) 1/2 (W) -1 , competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.Photodetectors based on organic active layers have shown significant advantages over the past decade. The use of polymers instead of inorganic materials like silicon or germanium leads to a strong reduction in processing cost and opens possibilities for applications on large area, flexible and transparent substrates 1-4 . Today, organic devices exhibit good electrical performance and can compete with amorphous silicon, but improvements need to be made to increase their lifetime. ____________________________ a)