Ga 2 O 3 and Ga 2 O 3 -TiO 2 (GTO) nano-mixed thin films were prepared by plasma enhanced atomic layer deposition with an alternating supply of reactant sources, [(CH 3 ) 2 GaNH 2 ] 3 , Ti(N(CH 3 ) 2 ) 4 and oxygen plasma. The uniform and smooth Ga 2 O 3 and GTO thin films were successfully deposited. Excellent step coverage of these films was obtained by chemisorbed chemical reactions with oxygen plasma on the surface. The dielectric constant of GTO thin film definitely increased compared to Ga 2 O 3 film, and the leakage currents of GTO films were comparable to Ga 2 O 3 films. The leakage current density of a 40-nm-GTO film annealed at 600 • C was approximately 1×10 −7 A/cm 2 up to about 600 kV/cm.

No abstract