No abstract

This paper reports the effects of different light intensity of white color LEDs illuminated on P-TFT devices doped and un-doped with B 2 H 6 inside the polycrystalline silicon channel with different channel width/length (W/L) by analyzing I d -V g transfer curves. Results indicate that the threshold voltage (V th ), of the p-TFT device was shifted to positive values by increasing illumination intensity, and C-V curves will be in accordance with the V th shift to positive voltage. Off Current (I off ) and sub-threshold swing (S.S.) of p-TFT devices were increased with increasing illumination intensity. The reason why the doped p-TFT devices revealed much photo sensitivity is correlated with B 2 H 6 dosage doping directly inside the grain boundaries of the pchannel creating the deep traps and inside the gate dielectric creating the electron traps, and causes larger V th shift and worse device degradation from second ion magnet spectroscopy (SIMS) analysis.