In 0.52 Al 0.48 As ∕ In 0.39 Ga 0.61 As 0.77 Sb 0.23 ∕ In 0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5MeV protons at fluences from 2×1011to2×1015protons∕cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2×1011cm−2, which was equivalent to around 40years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs∕InGaAsSb∕InGaAs DHBTs appear to be well suited to space or nuclear industry applications.
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