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We report on a modeling technique that uses charge transport equations to calculate channel current in organic field effect transistors (OFETs) by numerical solution in the SPICE simulation program. SPICE is also used to optimize the model and achieve a fit to measured characteristics within 5% error. The overall modeling technique is a bridge between physical models of charge transport and a SPICE model useful in circuit simulation without requiring a closed-form drain-current equation. The automatic optimization of the simulation to measured curves will also allow, in the future, the empirical weighing of various charge transport effects in search of physical device operation, given sufficient empirical data. This modeling technique was applied to the measured characteristics of an OFET using pentacene in which the mobility was dependent on the voltage in the channel. The accuracy of the fit was better than 5% for 40 V > V DS > 7 V and better than 20% for V DS < 7 V. Simulation was completed within 3 min for this optimization on a modern personal computer.

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