We explore theoretically the magnetoresistvity of three-dimensional Weyl and Dirac semimetals in transversal magnetic fields within two alternative models of disorder: (i) short-range impurities and (ii) charged (Coulomb) impurities. Impurity scattering is treated using the self-consistent Born approximation. We find that an unusual broadening of Landau levels leads to a variety of regimes of the resistivity scaling in the temperature-magnetic field plane. In particular, the magnetoresitance is non-monotonous for the white-noise disorder model. For $H\to 0$ the magnetoresistance for short-range impurities vanishes in a non-analytic way as $H^{1/3}$. In the limits of strongest magnetic fields $H$, the magnetoresistivity vanishes as $1/H$ for pointlike impurities, while it is linear and positive in the model with Coulomb impurities

We present experimental results and a theoretical model for the gate-controlled spin-valve effect in carbon nanotubes with side-attached single-molecule magnets TbPc (Terbium(III) bis-phthalocyanine). These structures show a giant magnetoresistance up to 1000% in experiments on single-wall nanotubes that are tunnel-coupled to the leads. The proposed theoretical model combines the spin-dependent Fano effect with Coulomb blockade and predicts a spin-spin interaction between the TbPc molecules, mediated by conducting electrons via the charging effect. This gate-tuned interaction is responsible for the stable magnetic ordering of the inner spins of the molecules in the absence of magnetic field. In the case of antiferromagnetic arrangement, electrons with either spin experience the scattering by the molecules, which results in blocking the linear transport. In strong magnetic fields, the Zeeman energy exceeds the effective antiferromagnetic coupling and one species of electrons is not scattered by molecules, which leads to a much lower total resistance at the resonant values of gate voltage, and hence to a supramolecular spin-valve effect.

We explore theoretically the magnetoresistance of Weyl semimetals in transversal magnetic fields away from charge neutrality. The analysis within the self-consistent Born approximation is done for the two different models of disorder: (i) short-range impurties and (ii) charged (Coulomb) impurities. For these models of disorder, we calculate the conductivity away from charge neutrality point as well as the Hall conductivity, and analyze the transversal magnetoresistance (TMR) and Shubnikov-de Haas oscillations for both types of disorder. We further consider a model with Weyl nodes shifted in energy with respect to each other (as found in various materials) with the chemical potential corresponding to the total charge neutrality. In the experimentally most relevant case of Coulomb impurities, we find in this model a large TMR in a broad range of quantizing magnetic fields. More specifically, in the ultra-quantum limit, where only the zeroth Landau level is effective, the TMR is linear in magnetic field. In the regime of moderate (but still quantizing) magnetic fields, where the higher Landau levels are relevant, the rapidly growing TMR is supplemented by strong Shubnikov-de Haas oscillations, consistent with experimental observations. arXiv:1709.02361v2 [cond-mat.mes-hall]

We analyze theoretically the conductivity of Weyl semimetals within the self-consistent Born approximation (SCBA) in the full range of disorder strength, from weak to strong disorder. In the range of intermediate disorder, we find a critical regime which separates the semimetal and diffusion regimes. While the numerical values of the critical exponents are not expected to be exact within the SCBA, the approach allows us to calculate functional dependences of various observables (density of states, quasiparticle broadening, conductivity) in a closed form. This sheds more light on the qualitative behavior of the conductivity and its universal features in disordered Weyl semimetals. In particular, we have found that the vertex corrections in the Kubo formula are of crucial importance in the regime of strong disorder and lead to saturation of the dc conductivity with increasing disorder strength. We have also analyzed the evolution of the optical conductivity with increasing disorder strength, including its scaling properties in the critical regime. arXiv:1907.03018v1 [cond-mat.dis-nn]

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