Electronic distributions of various symmetries have been investigated for both valence and conduction bands in a series of Al-Mn and Al-Mn-Si alloys of different structural states (amorphous, quasi-crystalline or crystalline) and Mn concentrations ranging from 14 to 22 at.%. Experiments have been carried out by means of soft-X-ray emission and photoabsorption spectroscopies. This allowed the authors to provide a complete description of the valence band states and to confirm the progressive opening of a small gap in the Al-sp DOS at the Fermi level with increasing Mn concentration in the alloys. At a given Mn concentration the gap is wider for the quasi-crystalline phase than for its crystalline counterpart.
During heat‐treatment of Mg‐containing Al‐based alloys, the Mg concentration changes considerably. As compared to the pure material significant surface corrosion is observed for the air heattreated alloy. In vacuum heat treatment the Mg content of the surface layer increases considerably. Initially metallic Mg is detected on the surface which, however, becomes oxidized later on. On the basis of the investigations one has to assume that the process is not a simple diffusion mechanism only. A new conception is formed for the process according to which it is controlled by the breaking up of the Al2O3 barrier layer by Mg.
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