We analyse the segment density distribution about the center of mass in an isolated self-interacting polymer chain. We find that the center-of-mass operator is renormalizable without introducing new renormalisation factors. The segment density distribution is calculated to one loop order. The interaction reduces the density in the center of the chain. This effect, which was to be expected, is due to a somewhat surprising mechamism : the interaction suppresses fluctuations of individual segments away from their average position
The electrical behavior of the parasitic AI-gate MOS transistor on LOCOS and SILO isolation structures is investigated. The influence of the two-dimensional parasitic channel on the isolation performances is pointed out by studying the bird's beak length, the field oxide thickness, and the use of a semi-or fully recessed structure. The measured characteristics are discussed and explained with the assistance of the two-dimensional process simulations of the isolation structures.
Electrical characteristics of semi-recessed and fully-recessed LOCOS isolation techniques are analyzed. Two-dimensionnal process/device simulations, performed with the IMPACT package, have demonstrated the effect of the Si/SiO2 interface shape on isolation efficiency. An excellent agreement has been found between simulations and measurements for the studied structures
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