High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy Appl. Phys. Lett. 101, 132109 (2012) InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy Appl. Phys. Lett. 101, 133110 (2012) Comparative study of surface recombination in hexagonal GaN and ZnO surfaces J. Appl. Phys. 112, 063509 (2012) Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy J. Appl. Phys. 112, 063510 (2012) Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots