We report on the growth and exploitation of InGaN epilayers as a photoelectrochemical cell (PEC) material for direct generation of hydrogen by splitting water using photoelectrochemical hydrolysis. Under white light illumination, a drastic dependence of the photocurrent density on the In content was observed. Direct hydrogen gas generation by splitting water was accomplished using an n-type InxGa1−xN epilayer with a relatively high In content (x∼0.4) as a working electrode. This demonstration of hydrogen generation by water splitting accomplished using InGaN based PEC is highly encouraging.

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