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The thermally activated magnetization reversals in magnetic nanodevices have been theoretically investigated. This kind of thermal fluctuations is found to be the dominant cause of intrinsic write error in magnetoresistive random access memory elements, on which our study is aimed. Calculations are performed in the Stoner–Wohlfarth model assuming a single-domain free layer magnetization. The thermal fluctuations as a form of random telegraph noise in output voltage level are systematically characterized in both the time and frequency domains. The relationship of the thermal fluctuations with the free layer magnetic property, temperature and external magnetic field has been established.

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