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The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the temperature range 230-360 K with interval of 10 K. The calculated zero bias barrier height ( bo  ) and the ideality factor (n) using thermionic theory show strong temperature dependence. The experimental values of bo      plot gives bo   1.17 eV and A *  31.16 A/cm 2 K 2 with standard deviation 0  0.16 V.

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