During the initial processing of a new technology, data became available showing Gate Oxide Time Dependent Dielectric Breakdown (TDDB) shifts due to charge generation from Passivation (CAPS) level plasma processing. This paper presents the detection and characterization of various charge parameters from plasma processed Silicon Nitride CAPS using non-contact Corona -Oxide -Semiconductor (COS) charge measurement techniques. The charge signature noted in the antenna data was reproduced using COS techniques on blanket Oxidemitride films. This investigation shows not only that COS techniques can detect magnetically induced plasma damage, but rhat COS measurements can be used to reduce charging through designed experiments.