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We investigate the frequency gaps for zone-folded LA and TA phonons propagating perpendicular to the layers in a-Si:H/a-SiN":H superlattices using Raman and phonon transmission spectroscopy. Raman spectra in the forward scattering configuration were used to determine the magnitude of the zone-center gaps and the symmetry of the zone-center modes delimiting these gaps.The zone-boundary gaps were measured in the backscattering geometry by choosing the superlattice period and the excitation wavelength so as to couple the light to the zone-boundary phonons. The phonon transmission spectra show minima corresponding to frequency gaps in the dispersion relation of TA phonons. Other minima appear at those frequencies where the LA and TA zonefolded branches cross. They are associated with additional gaps in the phonon dispersion relation for modes with mixed LA and TA character with wave vectors deviating from the superlattice normal. The phonon blocking within the frequency gaps is degraded as a result of phonon scattering. By comparing the transmission spectra of samples with a different number of layers we conclude that for low phonon energies ( & 20 crn ') the scattering takes place mainly at the first superlattice interfaces near the substrate.

Frequency gaps for acoustic phonons with a propagation direction oblique to the superlattice layers are investigated by phonon transmission spectroscopy in amorphous superlattices. In addition to the gaps at the center and at the boundaries of the superlattice mini-Brillouin-zone, the phonon transmission spectra show gaps associated with stop bands for coupled phonon modes with mixed longitudinal and transverse character. The position of the gaps is well explained by a description of the phonons in the elastic continuum limit.

Abstract. Phonon spectroscopy measurements were used to examine the scattering of high frequency phonons (300 GHz -1 THz) in amorphous materials. The experiments were done with the use of time and frequency resolved measurements of the phonon transmission behaviour through amorphous single films of different thicknesses. The typical film thicknesses were of the order of 10 nm. In contrast to the pure amorphous semiconductors Si and Ge our experiments show inelastic phonon scattering processes in the case of Si0 2 and Si :H. This inelastic phonon scattering also occurs when the pure semiconductors Si and Ge are prepared in an O 2 or H 2 atmosphere, but is missing when the preparation process is done in an N 2 atmosphere. In films of the pure semiconductors a-Si and a-Ge we only found evidence to elastic scattering processes. In further experiments at heated a-Si:H sampIes we could ex amine the atomical bonded hydrogen to be the center of the inelastic phonon scattering.

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