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We have identified a Mn-rich layer on the surface on (Ga,Mn)As thin films which significantly influences soft x-ray absorption measurements. The Mn L3,2 x-ray absorption spectra of the untreated films show a strong multiplet structure, consistent with earlier observations and characteristic of MnO. After removal of the surface layer, the multiplet structure is less pronounced and the spectrum is shifted to ∼0.5 eV lower photon energy. Comparison with calculated spectra imply a localized Mn ground state for the untreated sample and a hybridized ground state after etching. In addition, a large x-ray magnetic circular dichroism is observed at the Mn L3,2 edge in the etched film. These results may explain several peculiarities of previously reported x-ray absorption studies from (Ga,Mn)As.

Atomic force microscopy, transmission electron microscopy, optical, and magneto-optical microscopy have been used to study how structural and magnetic properties are changed when a Co/Pt multilayer is quasihomogeneously irradiated with Ga ions. Under low irradiation fluence, both grain size and texture in the multilayer increase. These effects continue for fluences in excess of 1ϫ10 15 Ga ions/cm 2 , but beyond this dose significant thinning of the multilayer is also observed. Three distinct irradiation-induced magnetic regimes with sharp transitions between each were identified. For Ga fluences less than 5ϫ10 12 ions/cm 2 , the irradiated region retains perpendicular uniaxial anisotropy but with coercivity lower than that of the as-grown film. For fluences between 5ϫ10 12 and 1ϫ10 13 Ga ions/cm 2 , a transition from perpendicular to in-plane magnetization was experienced. Very little change of the in-plane magnetic properties of irradiated multilayers is then observed until the sample experiences a ferromagnetic to paramagnetic transition at fluences around 1ϫ10 15 Ga ions/cm 2 . A brief comparison with the effect of irradiating with He ions is given.

The local and collective behavior of magnetic arrays fabricated by focused ion beam (FIB) patterning of a Co/Pt multilayer is described. The arrays comprised 1 μm nonirradiated square elements separated by narrow lines which were written using the FIB. While the square elements supported perpendicular magnetization, the ion fluence used to write the lines was chosen to make the local magnetization there lie in-plane. Lorentz microscopy showed that lines were approximately 60 nm wide and that the magnetization had the expected orientation. Application of fields perpendicular and parallel to the array showed that the magnetization in the square elements and in the lines could be controlled essentially independently of each other. Magneto-optic microscopy was used to study the behavior of the arrays as a whole. Frustrated checkerboard patterns were observed, whose detailed properties depended to an extent on the fluence used to write the lines.

We demonstrate an isolated magnetic interface anisotropy in amorphous CoFeB films on (Al)GaAs(001), similar to that in epitaxial films but without a magnetocrystalline anisotropy term. The direction of the easy axis corresponds to that due to the interfacial interaction proposed for epitaxial films. We show that the anisotropy is determined by the relative orbital component of the atomic magnetic moments. Charge transfer is ruled out as the origin of the interface anisotropy, and it is postulated that the spin-orbit interaction in the semiconductor is crucial in determining the magnetic anisotropy.