The sub-band energies of In,Ga, .As quantum wells strained between GaAs barriers and substrate are calculated using a model which takes into account strain, non-parabolicity and quantum well effects. A comparison is made with low-temperature photoluminescence and photoluminescence excitation spectra of In,Ga, .As quantum wells for which x=0.28. The transitions 1H-IC. 1L-IC and 2H-2C have been identified for the 7.5 nm well.
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