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a b s t r a c tThe electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of $5.5 Â 10 À4 ohm-cm, with a mobility $35 cm 2 /V S, and carrier concentrations $3 ⁄ 10 20 cm À3 . The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples >80%. InZnO has demonstrated properties adequate for photovoltaic applications.

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