Current flow through Pt/(Ba0.7Sr0.3)TiO3/Pt stack consists of both polarization current and electronic leakage current, which were separated by monitoring the discharging current when applied voltage was turned off. Electronic current comes from electrical field enhanced Schottky emission at the electrode–dielectric interface, and dominates the current flow at high electric field. At low electric field, polarization current prevails. The voltage and time dependence of the polarization current can be modeled by a distribution of Debye-type relaxations. The relaxation time and capacitance derived from current–time measurements were applied to simulate the current–voltage behavior, where good fitting to experimental result was obtained.
The reactive ion etching (RIE) of silicon nitride (Si3N4) films formed by low pressure chemical vapor deposition (LPCVD), has been investigated. Studies were done using plasmas of CHF3, CHF3+O2, and CHF3+CO2 gases. Anisotropic profiles with vertical sidewalls and no undercut have been achieved with all three plasmas. The etch rate of the Si3N4 films in a pure CHF3 plasma was found to decrease as a function of time. This effect is explained via a mass transport limiting mechanism. Constant etch rates were observed with plasmas of CHF3+O2 and CHF3+CO2. A selectivity of 10:1 for the etching of Si3N4 to the underlying Si substrate has been achieved with a CHF3+CO2 plasma.
The emissivity of silicon wafers in a rapid thermal processing chamber has been measured as a function of the wafer temperature. Wafers with different surface roughness and layers have been studied. For transparent wafers, both sides of the wafer affect the emissivity. This emissivity is not only affected by surface roughness, but also by the layers deposited on the wafer. It has also been observed that while the emissivity increases rapidly as the temperature increases from its room value to 600 °C, the emissivity decreases with a slope of −8.89×10−5 °C−1 for temperatures larger than 600 °C.
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