We have developed a system for manufacturing large‐Sized AMOLED devices which can scan sources or a substrate to produce WOLED or full‐colored OLED alternatively. We also have developed a valved organic evaporation source for 4th to 5th generation substrate which enables shutoff during idling time and open process time only. So we could improve the efficiency of material utilization up to 52% with maintaining 2.5% of non‐uniformity within 1100*1300mm2 substrate. We expect this source and system can improve performance and reduce the CoO (Cost of Operation).

We studied the field emission characteristics of DLC (Diamondlike Carbon) coated Si tip FEAs (Field Emitter Arrays) Volcano shaped gate was fabricated in order to obtain self-aligned structure Si tip was sharpened by conventional isotropic dry etching The DLC thin film was uniformly deposited on Si tip emitters by PECVD Gate aperture was defined by Ar etch-back process of photoresist planarization layer We obtained the emission current of 10 nA/tip and it was found that DLC coating improved the I-V characteristics of Si tip FEAs In addition, changes of emission characteristics were investigated with respect to the thickness and physical properties of DLC deposited on Si tip emitters

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