Articles you may be interested inInGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using selforganized nano-masks Appl.Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots Appl. Phys. Lett. 84, 4224 (2004); 10.1063/1.1755840Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser Self-organized InGaN quantum dots (QDs) with emission wavelength from green to red range have been grown on GaN templated c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of matrix layer composition on the structural and optical properties of InGaN QDs have been investigated. A continued growth of QDs is observed during the growth of In 0.1 Ga 0.9 N matrix layer, which results in an increase of the QDs' size. By using In 0.1 Ga 0.9 N matrix layer instead of GaN one, the annealing induced blue-shift in emission energy of the InGaN QDs can be suppressed. After the growth of top GaN cap layer, a larger red-shift caused by the quantum confined Stark effect is observed in the sample with In 0.1 Ga 0.9 N matrix layer. Employing this method, InGaN QD sample emitting at 615 nm with an internal quantum efficiency of 24.3% has been grown. The significance of this method is that it allows a higher growth temperature of InGaN QDs with emission wavelength in the green range to improve the crystalline quality, which is beneficial to enhance the efficiency of green InGaN QD light-emittingdiodes and laser diodes. V C 2013 AIP Publishing LLC. [http://dx.