Articles you may be interested inSurface-emitting terahertz quantum cascade lasers with continuous-wave power in the tens of milliwatt range Appl. Phys. Lett. Characterization and analysis of single-mode high-power continuous-wave quantum-cascade laser J. Appl. Phys. 98, 084508 (2005); 10.1063/1.2112170 Cavity-length effects of high-temperature high-power continuous-wave characteristics in quantum-cascade lasers Appl. Phys. Lett. 83, 5136 (2003); 10.1063/1.1634689High-power continuous-wave operation of a 6 μm quantum-cascade laser at room temperature

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We report bulk GaInNAs p − i − n photodiodes lattice-matched to GaAs substrates, grown by solid source molecular beam epitaxy with photoresponses out to ϳ1.3 m. The as-grown samples were characterized optically, structurally, and electrically. A low background doping concentration in the range of 10 14 -10 15 cm −3 was obtained in the samples. One of the samples with a 0.5 m thick GaInNAs absorbing layer gave a responsivity of 0.11 A/W for a band edge of 1.28 m at reverse bias of 2 V.

Avalanche breakdown characteristics are essential for designing avalanche photodiodes. In this work, we investigated the effects of adding Ga to Al1-xGaxAs0.56Sb0.44 quaternary alloys. Using p-in diodes with a 100 nm i-region and alloy composition ranging from x = 0 to 0.15, we found that the bandgap energy of Al1-xGaxAs0.56Sb0.44 reduces from 1.64 to 1.56 eV. The corresponding avalanche breakdown voltage decreases from 13.02 to 12.05 V, giving a reduction of 64.7 mV for every percent addition of Ga. The surface leakage current was also found to be significantly lower in the diodes with x = 0.10 and 0.15 suggesting that Ga can be added to reduce the surface leakage current while still preserving the lattice match to InP substrate. The data from this work can be downloaded freely [1].