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The article reviews photophysical and photochemical properties of polysilanessilicon backbone r-conjugated polymers. Polysilanes have been of considerable research interest because of their electrical, optical and photoelectrical properties. Some of them seem to be prospective for the construction of electronic devices, like electroluminescent diodes, photodetectors, templates for oriented films of liquid crystals, molecular switches and phototransistors. Because of the effect of p-electron delocalization along the chain, they are good charge transporting materials and therefore good models for molecular wires. Their physical properties and chemical stability can be modified by side groups and by additives of different chemical structures.

Oxidative changes in poly[methyl(phenyl)silanediyl] (PMPSi) films exposed in a Weather‐O‐Meter ATLAS Ci 3000+ were monitored by Fourier transform infrared spectroscopy. Increases in absorption in the siloxane, carbonyl, and hydroxyl regions, decreases in absorption in the SiSi region, and changes in the aromatic CH bond region were monitored. Experiments in argon and air indicated the key role of oxygen in the process. The photooxidation of PMPSi was retarded by triazine‐ and oxalanilide‐based ultraviolet absorbers [2‐(4,6‐diphenyl‐1,3,5‐triazin‐2‐yl)‐5‐(hexyloxy)phenol and N‐(4‐tert‐butyl‐2‐ethoxyphenyl)‐N′‐(2‐ethylphenyl)oxalanilide] protecting the polymer by the excited‐state intramolecular proton‐transfer mechanism. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 714–721, 2004