Presented is a V-band low-power Darlington-pair double-balanced gate-pumped mixer with a thin-film (TF) LC-hybrid linear combiner in 90 nm CMOS technology. The compact TF LC-hybrid linear combiner is used to feed the differential RF and LO signals to a gatepumped mixer. Meanwhile, it provides high port-to-port isolations of the mixer. The proposed gate-pumped mixer achieves a 20.76 dB conversion gain, a 27 dBm 1 dB compression point, and a +8.5 dBm input IP3 under a low LO power of 22 dBm. The core power consumption is only 2.8 mW from a 1 V supply. The chip size with all testing pads and dummy blocks is only 0.52 mm 2 .Introduction: Since the demand for low cost, high integration and high data-rate short-range wireless communication applications is progressively increasing, many studies of millimetre-wave (MMW) integrated circuits (ICs) have been reported [1][2][3][4][5]. To operate in MMW bands (Ka, V and W bands), advanced CMOS technologies such as 90/65/ 40 nm nodes are the prior choice to implement for the MMW ICs. For a wireless communication system, the mixer is one of the components to determine key performances such as conversion gain (CG), bandwidth (BW), linearity, and isolation of the RF transceiver [1]. [2][3][4] adopt various baluns to implement MMW mixers. A low-loss and high-isolation hybrid combiner is used for a gate-driven V-band mixer [5]. In this Letter, a Darlington-pair topology is employed to improve the cutoff frequency f T of the CMOS transistor. Then, four Darlington-pairs are incorporated with a TF LC-hybrid linear combiner and IF output buffers to form a double balanced mixer in 90 nm CMOS technology.