Multi-frequency receivers have become a standard for Global Navigation Satellite Systems ( GNSS ) and Global Positioning Systems ( GPS ) applications. In smart vehicle applications, multi-frequency receivers need to work reliably in a large temperature variation. Even though literature has presented solutions for frequency stability over temperature, they usually rely on external control circuits or non-silicon solutions such as wide-bandgap materials or MEMS resonators, leading to higher production costs. This work proposes a temperatureaware design of an active-inductor-based, MOSFET only, voltagecontrolled oscillator suitable for the L-Band. The temperature analysis is made based on a gm/ID methodology for the transistor biasing and MOSFET capacitors. Those analyses are validated from simulation models (-40 • C to 175 • C) and transistor measurements up to 200 • C. Monte-Carlo post-layout simulations present a mean first-order temperature coefficient of 237 ppm/ • C and cover the entire L-Band.