We have studied the influence of Group V overpressure on the final shape and size of InAs nanostructures grown on ͑001͒ InP substrates. The mechanisms leading to postgrowth modifications in the InAs nanostructures are discussed. The simultaneous action of Group V overpressure and stress field-produced by the InAs nanostructures-can induce strong material transport. The direction of this material net current depends on the type of Group V element used for the overpressure flux. In situ reflection high-energy electron diffraction, atomic force microscopy, and transmission electron microscopy measurements were used to characterize the transitions in morphology. Our results show that morphological studies considering the grown surface that do not take into account postgrowth processes can be misleading to understand the growth mechanisms governing the self-assembling process.
We report on Langmuir-Blodgett (LB) films made with emeraldine salt polyaniline (PAni-ES) and organophilic montmorillonite clay mineral (OMt), where synergy between the components was reached to yield an enhanced performance in detecting trace levels of cadmium (Cd(2+)), lead (Pb(2+)) and copper (Cu(2+)). Detection was carried out using square wave anodic stripping (SWAS) voltammetry with indium tin oxide (ITO) electrodes modified with LB films of PAni-ES/OMt nanocomposite, whose data were compared to those obtained with electrodes coated with neat PAni-ES and neat OMt LB films. The enhanced performance in the nanocomposite may be attributed to the stabilizing and ordering effect promoted by OMt in PAni-ES Langmuir films, which then led to more homogeneous LB films. According to X-ray diffraction data, the stacking of OMt layers was preserved in the LB films and therefore the PAni-ES chains did not cause clay mineral exfoliation. Instead, OMt affected the polaronic state of PAni-ES as indicated in UV-vis, Raman and FTIR spectra, also consistent with the changes observed for the Langmuir films. Taken together these results do indicate that semiconducting polymers and clay minerals may be combined for enhancing the electrical properties of nanostructures for sensing and related applications.
Films were produced on stainless-steel substrates by radiofrequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) of mixtures containing 70% hexamethyldisiloxane, 20% oxygen and 10% argon. While the plasma excitation power was varied from 15 to 75 W, the deposition time and total gas pressure were kept constant at 1800 s and 8.0 Pa, respectively. The influences of the plasma power on the plasma kinetics and the ion bombardment of the growing film are discussed. Film composition and chemical structure were determined using X-ray photoelectron-and infrared reflectance-absorbance spectroscopy, respectively. Profilometry was used to measure the thicknesses of the resulting layers. The root mean square roughness was evaluated from surface topographic profiles acquired by atomic force microscopy. Scanning electron microscopy and energy dispersive spectroscopy were employed to evaluate the morphology and elemental composition of the coatings. Electrochemical impedance spectroscopy and potentiodynamic polarization tests were used to derive the corrosion resistance of the samples to a saline solution. Substantial changes in the material structure and progressive increases in film thickness were observed with increasing applied power. The resulting material was an organosilicon layer composed of Si\ \O backbones surrounded by methyl groups, very similar to conventional polydimethylsiloxane. Increases in the proportions of Si\ \O and methylsilyl groups in the structure were observed at greater plasma excitation powers, indicating densification of the structure owing to greater ion bombardment. The surface morphology and roughness were also dependent on the treatment power. Independently of the deposition conditions, application of the film increased the corrosion resistance of the stainless steel. A 10,000-fold elevation in the total system resistance under electrochemical testing was achieved for the film prepared with the greatest ion bombardment intensity. Film thickness was observed to be a key parameter but the coating structure had a major effect on this result.
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