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Dependence of magnetoelectric properties on sintering temperature for nano-SiC-doped MgB2/Fe wires made by combined in situ/ex situ process J. Appl. Phys. 111, 07E135 (2012); 10.1063/1.3677660Effect of thermal strain on Jc and Tc in high density nano-SiC doped MgB2Effect of combined addition of nano-SiC and nano-Ho 2 O 3 on the in-field critical current density of MgB 2 superconductorThe effect on crystal structure, critical temperature (T C ), and critical current density (J C ) of bulk MgB 2 doped with nano-Ho 2 O 3 and naphthalene was studied. Among all the samples studied, the sample doped with 2.5 wt. % nano-Ho 2 O 3 have shown the best field dependent critical current density [J C (H)], i.e., 0.77 Â 10 5 A/cm 2 at 2 T and 10 K. While naphthalene doped MgB 2 sample has shown the least J C (H) characteristics. The improved J C (H) characteristics in the nano-Ho 2 O 3 doped MgB 2 samples are attributed to improved flux pinning properties due to the formation of HoB 4 and in naphthalene doped MgB 2 samples. The slight lower T C value (37.01 K) in naphthalene doped samples is attributed to the occurrence of lattice defect by the substitution of carbon at boron site of MgB 2 superconductor. Lower DT C value implies the lesser anisotropy in all the synthesized samples. The flux pinning force density (F P /F Pmax ) curves are theoretically analyzed using Dew-Hughes model. The result revealed that point pinning is the dominant pinning mechanism for nano-Ho 2 O 3 doped MgB 2 samples, while, surface and grain boundary pinning become dominant with increasing naphthalene addition in nano-Ho 2 O 3 doped MgB 2 samples. V C 2015 AIP Publishing LLC. [http://dx.

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