High‐quality epitaxial MgO has been deposited from methylmagnesiumtert‐butoxide on Si(001) by high vacuum CVD. The use of 3C–SiC buffer layers, which are grown using 1,3‐disilabutane and vicinal Si(001) substrates that are 4° and 6° off towards the [110] direction, are found very effective in establishing the epitaxial growth of the MgO films (see Figure).
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