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A study of the temperature and stoichiometry dependence of diamond synthesis in low pressure premixed acetylene-oxygen flames is presented. A specially designed low pressure flat flame operating at 40 Torr is employed to deposit diamond films uniformly over areas of at least 2 cm2. Under optimized conditions of substrate temperatures and flame equivalence ratios, high quality translucent diamond that is well faceted is synthesized exhibiting first-order Raman fullwidths (half maximum) of about 2.5 cm−1. Diamond growth rates under these optimum conditions are approximately 4 μm/h. The film growth rate is found to drop off substantially at high substrate temperatures, with little or no carbon deposited beyond a temperature of 1070 °C. The growth behavior in response to changes in flame equivalence ratio and substrate temperature is discussed in terms of the possible role that oxygen-containing species may have on surface chemistry. The results described here are also used to project a base cost for manufacturing diamond under these process conditions.

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