Photoluminescence lineshape properties of quasi-two-dimensional electron systems in setback δ-doped GaAs heterostructures are studied at liquid helium temperature. Contributions from the ground and the first excited two-dimensional subband are clearly observed. A simple fit to the lineshape including broadening demonstrates that there is an exponential low-energy tail associated with the ground subband. No such tail is observed for the first excited subband. The fit precisely reveals the subband bottom energies, the Fermi energy, the electron temperature and the recombination intensities. A self-consistent calculation of subband properties including the potential contribution of the setback δ-doping reproduces well the subband properties and the recombination intensities.

We studied the interlayer charge transfer in n-modulation doped Al 1−x Ga x As-GaAs single heterostructures by photoluminescence and magnetotransport. Photoluminescence contributions from a high-mobility quasi-twodimensional electron system at the interface and GaAs bulk type excitons were analyzed, covering an excitation intensity range of nearly three orders of magnitude. The experiment was compared with selfconsistent band structure calculations that allowed to follow the charge redistribution in the sample. After sample cool down in the dark a parallel conducting quasi-twodimensional channel of low electron mobility appeared in the Al 1−x Ga x As-layer, that gained in density up to a saturation value. There was only little interaction between the Al 1−x Ga x As and GaAs sides in the persistent regime and a reduction of the depletion charge in the GaAs could largely account for the interface channel density enhancement. Contrary, the negative photoeffect present during continuous illumination strongly depends on the interaction between the interface and the parallel channel, which serves as a temporary sink for excess charges from the GaAs side. When the illumination is switched off the parallel channel acts as a source and the sample essentially returns to the prior illumination state of saturation.

No abstract

The photoluminescence of an electron inversion layer with a monolayer of carbon acceptors in GaAs was investigated at liquid helium temperatures. In the limit of high laser illumination the luminescence line approaches a hat shape, the expected form if the recombination center is a single isolated acceptor. At medium illumination the line takes on a trapezoidal form, and in the small illumination limit a triangular shape emerges. The line shape variations could be traced back to the interaction of the carbon acceptors which is ruled by the illumination strength. Acceptor-acceptor interactions spread the distribution of transition energies and initiate a transfer of oscillator strength. The triangular line shape at low illumination is a clear signature of an impurity band formed in the carbon monolayer.

No abstract